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Graphene on ultra-flat thermal Silicon Oxide Substrate, various Layers
Graphene film of various thickness on a 200nm thermally grown Silicon Oxide film on a silicon wafer. The substrate is available with graphene film of 1, 2, 3-5 to 6-8 layers. For AFM imaging or as ultra-flat experimental platform.
Product Details
Description
Thin mono layers of graphene are created by using the process of chemical vapour deposition.
Characteristics
- Four thicknesses of graphene available: 1, 2, 3-5 or 6-8 layers
- Substrate is a thermally grown 200nm thin silicon oxide layer on an ultra-flat silicon wafer with a thickness of 675µm and a size of 5x5mm
- Graphene coverage more than 75%
Specifications
| Type | Thickness of the Graphene |
Transparency | TEM Grid/AFM Substrate | Support Film |
| 1 Layer | ~ 0,35nm | ~96,4% | N/A | ultra-flat Silicon |
| 2 Layer | ~ 0,7nm | ~92,7% | N/A | ultra-flat Silicon |
| 3-5 Layer | 1,0 - 1,7nm | ~85,8-90,4% | N/A | ultra-flat Silicon |
| 6-8 Layer | 2,1 - 2,8nm | ~78,5-83,2% | N/A | ultra-flat Silicon |
More Information
| Coating |
Graphene
|
|---|---|
| Film Thickness | 0,35 - 2,8nm |
| Material |
SiO2 Substrate
|
| Manufacturer |
EMS
|
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