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Thin mono layers of graphene oxide are created by oxidizing graphene layer using a proprietary oxidation process.
Characteristics
Type | Graphene Oxide Thickness* | Substrate | Support Film |
1 Layer | 0.8-1.2nm | Silicon, AP 0.5x0.5mm | Silicon Nitride 2.5µm holes |
2 Layer | 1 - 1.5nm | Silicon, AP 0.5x0.5mm | Silicon Nitride 2.5µm holes |
*Measured by EELS
Coating |
Graphene Oxide
|
---|---|
Film Thickness | 0,8 - 1,5nm |
Material |
Silicon Nitride
|
Material Symbol | Si |
Mesh Style |
single Hole
|
Manufacturer |
EMS
|
Exclusive
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