4"-Silicon Wafer, p-doped, one side polished

The silicon wafer have a diameter of 100mm and have the following approximate properties:
Doping: boron (p type); Orientation: (100); Thickness: app. 525µm, Resistance: <20 Ohmcm. Depending on the batch thickness or resistance may vary slightly. The wafers are polished on one side. Wafer carrier/box included (no clean room quality).

Grouped product items
Product Name	Qty
4“-Silicon wafer, p-doped, one side polished, each, incl. single carrier SC4CZp-525-01 €29.50 €35.11
4“-Silicon wafer, p-doped, one side polished, 10 pcs, incl. storage box SC4CZp-525-10 €237.50 €282.63
4“-Silicon wafer, p-doped, one side polished, 25 pcs, incl. storage box SC4CZp-525-25 €498.50 €593.22