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Graphene Oxide on ultra-flat thermal Silicon Oxide Substrate, various Layers
Graphene Oxide film of various thickness on a 200nm thermally grown Silicon Oxide film on a silicon wafer. The substrate is available with graphene oxide film of 1 and 2 layers. For AFM imaging or as ultra-flat experimental platform.
Product Details
Description
Thin mono layers of graphene oxide are created by oxidizing graphene layer using a proprietary oxidation process.
Characteristics
- Two thicknesses of graphene oxide available: 1 or 2 layers
- Substrate is a thermally grown 200nm thin silicon oxide layer on an ultra-flat silicon wafer with a thickness of 675µm and a size of 5x5mm
- Graphene oxide coverage about 70%
- Graphene Oxide film is hydrophilic and therefore more suitable for life science applications than graphene films
Specifications
| Type | Graphene Oxide Thickness* | Substrate | Support Film |
| 1 Layer | 0.8 – 1.2nm | N/A |
ultra-flat Silicon |
| 2 Layer | 1 – 1.5nm | N/A |
ultra-flat Silicon |
* Measured by EELS
More Information
| Coating |
Graphene Oxide
|
|---|---|
| Film Thickness | 0,8 - 1,5nm |
| Material |
SiO2 Substrate
|
| Manufacturer |
EMS
|
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